Improved Electrical Contact Property of Si-Doped GaN Thin Films Deposited by PEALD with Various Growth Cycle Ratio of SiNx and GaN
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Linqin Jiang | Wan‐Yu Wu | D. Wuu | Y. Qiu | W. Zhu | P. Gao | Zhi-Xuan Zhang | Shui‐Yang Lien | Feng-Min Lai | Shicong Jiang
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