Body-Bias Calibration Based Temperature Sensor

Temperature monitoring is critical to the operation of all SoCs, as it provides information to adjust logic timing, optimize power management, or calibrate analog circuits. The temperature information should be obtained with a fine spatial and temporal resolution, which requires low-area sensors with a fast conversion time. Digital MOS sensors offer such performance and take full advantage of process scaling; however, they often require costly two-point calibration to achieve the desired accuracy. This chapter presents a digital sensor in 28 nm FD-SOI process which takes advantage of the technology’s extended body-biasing capabilities for process compensation. Through an NMOS-only oscillator, a single regulator provides a low-noise supply and NWell biasing. The probe is complemented by an on-chip digital logic backend to compensate for non-linearities. The whole system achieves an accuracy of −1.4 ∘C/1.3 ∘C, a per-probe area of 1044 µm2, and accommodates a wide operating range (0.62–1.2 V) and satisfying power (2.0 nJ/Sa) and accuracy.

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