论文信息 - Carbon nanotube Schottky diodes for high frequency applications

Carbon nanotube Schottky diodes for high frequency applications

We have developed Schottky diodes using semiconducting nanotubes with titanium Schottky and platinum Ohmic contacts. At low biases these diodes showed ideality factors in the range of 1.5 to 1.9. The performance prediction as room-temperature detectors at 2.5 THz resulted in NEP potentially comparable to that of the state-of-the-art gallium arsenide solid-state Schottky diodes in the range of 10/sup -13/ W//spl radic/Hz.

E. Schlecht | P.H. Siegel | H.M. Manohara | E.W. Wong | R.D. Hunt

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