Quality assessment of layer-structured semiconductor single crystals by nuclear quadruple resonance method

A method for quality assessment of layer-structured semiconductor single crystals (InSe, GaSe, GaS) grown in evacuated ampoules by the Bridgman technique is proposed. For this purpose, nuclear quadruple resonance method with a consecutive scanning of the entire sample volume and evaluation of crystal perfection by the resulting spectra is used. Effective interaction between high-frequency field and crystal and, accordingly, restriction of scanning area of sample under study is provided with the use of a two-way saddle-shaped coil for a nuclear quadruple resonance spectrometer.