Ultrafast Excitonic Behavior in Two-Dimensional Metal–Semiconductor Heterostructure
暂无分享,去创建一个
B. K. Gupta | P. Ajayan | Sangwoon Yoon | Y. Jung | Changkyoo Park | M. G. Hahm | J. Nam | S. Srivastava | Sila Jin | Mahesh Kumar | Kyu-Hwan Lee | Jeong-Hwan Lee | Yeonju Park | Deok Min Seo | Suryeon Lee | Ju-Ok Seo | Yoon-Jun Kim | Y. L. Kim
[1] Christopher M. Smyth,et al. WSe2-contact metal interface chemistry and band alignment under high vacuum and ultra high vacuum deposition conditions , 2017 .
[2] Qiyuan He,et al. Recent Advances in Ultrathin Two-Dimensional Nanomaterials. , 2017, Chemical reviews.
[3] A. Chernikov,et al. Direct Observation of Ultrafast Exciton Formation in a Monolayer of WSe2. , 2017, Nano letters.
[4] Xiaodong Xu,et al. Determination of band offsets, hybridization, and exciton binding in 2D semiconductor heterostructures , 2017, Science Advances.
[5] Faisal Ahmed,et al. Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides. , 2017, ACS nano.
[6] B. Cho,et al. Alloyed 2D Metal-Semiconductor Heterojunctions: Origin of Interface States Reduction and Schottky Barrier Lowering. , 2016, Nano letters.
[7] Wei Chen,et al. Observation of Strong Interlayer Coupling in MoS2/WS2 Heterostructures , 2016, Advanced materials.
[8] Dong Jae Kim,et al. Alloyed 2D Metal-Semiconductor Atomic Layer Junctions. , 2016, Nano letters.
[9] Su-Huai Wei,et al. Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier , 2016, Science Advances.
[10] Fengnian Xia,et al. Recent Advances in Two-Dimensional Materials beyond Graphene. , 2015, ACS nano.
[11] J. Robertson,et al. 3D Behavior of Schottky Barriers of 2D Transition-Metal Dichalcogenides. , 2015, ACS applied materials & interfaces.
[12] F. Rana,et al. Surface Recombination Limited Lifetimes of Photoexcited Carriers in Few-Layer Transition Metal Dichalcogenide MoS₂. , 2015, Nano letters.
[13] Junhong Chen,et al. Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors , 2015, Nature Communications.
[14] A. Morpurgo,et al. Strong interface-induced spin–orbit interaction in graphene on WS2 , 2015, Nature Communications.
[15] F. Rana,et al. Ultrafast dynamics of defect-assisted electron-hole recombination in monolayer MoS2. , 2014, Nano letters.
[16] Determination of band alignment in the single-layer MoS2/WSe2 heterojunction , 2014, Nature communications.
[17] Gautam Gupta,et al. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors. , 2014, Nature materials.
[18] Hsin-Ying Chiu,et al. Ultrafast charge separation and indirect exciton formation in a MoS2-MoSe2 van der Waals heterostructure. , 2014, ACS nano.
[19] Zhong Lin Wang,et al. Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics , 2014, Nature.
[20] A. Balocchi,et al. Exciton dynamics in WSe 2 bilayers , 2014, 1409.8553.
[21] K. Banerjee,et al. MoS₂ field-effect transistor for next-generation label-free biosensors. , 2014, ACS nano.
[22] R. T. Tung. The physics and chemistry of the Schottky barrier height , 2014 .
[23] Litao Sun,et al. Synthesis and Optical Properties of Large‐Area Single‐Crystalline 2D Semiconductor WS2 Monolayer from Chemical Vapor Deposition , 2014 .
[24] Yu-Lun Chueh,et al. Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures , 2014, Scientific Reports.
[25] Wei Liu,et al. Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors. , 2013, Nano letters.
[26] Hua Zhang,et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. , 2013, Nature chemistry.
[27] L. Chu,et al. Evolution of electronic structure in atomically thin sheets of WS2 and WSe2. , 2012, ACS nano.
[28] Qing Hua Wang,et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. , 2012, Nature nanotechnology.
[29] Wang Yao,et al. Valley polarization in MoS2 monolayers by optical pumping. , 2012, Nature nanotechnology.
[30] Dieter K. Schroder,et al. Carrier lifetimes in silicon , 1997 .