Influence of low temperature annealed ultrathin CYTOP buffer layer on the performance of single crystal organic field-effect transistors

We fabricated the organic field-effect transistors (OFETs) integrating C8-BTBT single crystalline microribbon arrays as the organic semiconductor. A low temperature (60°C) annealed ultrathin CYTOP buffer layer was inserted between the semiconductor and the electrodes to improve the performance of the OFETs. The charge mobility was increased from 1.7 to 3.6 cm2 V-1 s-1 through inserting the buffer layer. The performance enhancement was attributed to the significant decrease of the large contact resistance of the OFETs caused by the thick C8-BTBT single crystalline microribbons, which was reduced from 1.6 to 0.14 MΩ cm by inserting CYTOP buffer layer with thickness of 6 nm. Meanwhile, the CYTOP buffer layer not only protected the C8-BTBT single crystalline microribbon arrays from the harm of electrode evaporation, but also had no destructive effect on the C8-BTBT active layer. The outstanding results show an effective method of reducing the contact resistance to improve the performance of OFETs.

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