Silicon bipolar fixed and variable gain amplifier MMICs for microwave and lightwave applications up to 6 GHz
暂无分享,去创建一个
Three MMICs for microwave applications up to 6 GHz and for digital lightwave applications up to 5 Gb/s are presented. They are: (1) a 8-dB gain, 6-GHz half-power loss, fixed-gain wideband amplifier, fabricated in modified discrete transistor process: (2) a high-gain low-noise (1.6 dB) amplifier that can also be effectively used as a transimpedance amplifier; and (3) a 3-GHz variable-gain amplifier (VGA) with a wide gain control range (50 dB), suitable for 5 Gb/s-data rates in digital lightwave systems. The circuits were fabricated using a nonpolysilicon-emitter silicon bipolar process for transistors with a gain-bandwidth product f/sub T/=10 GHz and maximum oscillation frequency f/sub max/=20 GHz.<<ETX>>
[1] I. Kipnis,et al. Large-signal computer-aided analysis and design of silicon bipolar MMIC oscillators and self-oscillating mixers , 1989 .
[2] I. Kipnis,et al. A wideband, low-power, high-sensitivity and small-size 2.5-GHz static frequency divider IC , 1988, Proceedings of the 1988 Bipolar Circuits and Technology Meeting,.
[3] M. Maeda,et al. A DC-coupled wide dynamic range AGC amplifier IC for 560-Mbit/s optical transmission , 1987 .