Silicon technology tradeoffs for radio-frequency/mixed-signal (quote)systems-on-a-chip(quote)
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[1] M. Tiebout,et al. Phase noise in a differential CMOS voltage-controlled oscillator for RF applications , 2000 .
[2] T. Ishibashi. Influence of electron velocity overshoot on collector transit times of HBTs , 1990 .
[3] A. Schuppen,et al. SiGe devices and circuits: where are advantages over III/V ? , 1995, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995.
[4] Francis M. Rotella,et al. Modeling and optimization of inductors with patterned ground shields for a high performance fully integrated switched tuning VCO , 2002, Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285).
[5] F. M. Klaassen,et al. Modelling of scaled-down MOS transistors , 1980 .
[6] J.W. Slotboom,et al. Ultra-low-temperature low-ohmic contacts for SOA applications , 1999, Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024).
[7] Pasqualina M. Sarro,et al. Substrate options and add-on process modules for monolithic RF silicon technology , 2002, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.
[8] HongMo Wang. A 9.8 GHz back-gate tuned VCO in 0.35 /spl mu/m CMOS , 1999, 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278).
[9] A. Inoue,et al. The maximum operating region in SiGe HBTs for RF power amplifiers , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).
[10] M. Soyuer,et al. Fully–monolithic 3V SiGe differential voltage–controlled oscillators for 5GHz and 17GHz wireless applications , 1998, Proceedings of the 24th European Solid-State Circuits Conference.
[11] Lawrence E. Larson,et al. A theory of high-frequency distortion in bipolar transistors , 2003 .
[12] T. Lee,et al. A 1.5 V, 1.5 GHz CMOS low noise amplifier , 1996 .
[13] Xi Li,et al. A comparison of CMOS and SiGe LNA's and mixers for wireless LAN application , 2001, Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169).
[14] Lawrence E. Larson,et al. Cdma Mobile Radio Design , 2000 .
[15] Behzad Razavi,et al. Design considerations for direct-conversion receivers , 1997 .
[16] Alvin J. Joseph,et al. Transistor noise in SiGe HBT RF technology , 2000, Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124).
[17] D. Edelstein,et al. RF circuit design aspects of spiral inductors on silicon , 1998, 1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition (Cat. No.98CH36156).
[18] Tatsuya Ohguro,et al. High performance digital-analog mixed device on an Si substrate with resistivity beyond 1 k/spl Omega/ cm , 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).
[19] Han-Su Kim,et al. A porous Si based novel isolation technology for mixed-signal integrated circuits , 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).
[20] Mau-Chung Frank Chang,et al. High-frequency application of MOS compact models and their development for scalable RF model libraries , 1998, Proceedings of the IEEE 1998 Custom Integrated Circuits Conference (Cat. No.98CH36143).
[21] K. F. Lee,et al. Impact of distributed gate resistance on the performance of MOS devices , 1994 .
[22] Heng-Ming Hsu,et al. A 0.18 /spl mu/m foundry RF CMOS technology with 70 GHz F/sub t/ for single chip system solutions , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).
[23] Alex Q. Huang,et al. The future of bipolar power transistors , 2001 .
[24] E. Johnson. Physical limitations on frequency and power parameters of transistors , 1965 .
[25] Carlo Samori,et al. Spectrum folding and phase noise in LC tuned oscillators , 1998 .
[26] Joachim N. Burghartz,et al. Theory and design of an ultra-linear square-law approximated LDMOS power amplifier in class-AB operation , 2002 .
[27] Chik Patrick Yue,et al. On-chip RF isolation techniques , 2002, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.
[28] Domine M. W. Leenaerts,et al. A 2.4-GHz 0.18-/spl mu/m CMOS self-biased cascode power amplifier , 2003 .
[29] Piet Wambacq,et al. Distortion analysis of analog integrated circuits , 1998 .
[30] B. J. Buck,et al. GaAs MMICs for 5.2 GHz HIPERLAN , 1997 .
[31] S. Jeng,et al. Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology , 2002, IEEE Electron Device Letters.
[32] Stephen A. Maas,et al. Nonlinear microwave circuits , 1988 .
[33] P. Kinget,et al. A fully integrated 2.7 V 0.35 /spl mu/m CMOS VCO for 5 GHz wireless applications , 1998, 1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition (Cat. No.98CH36156).
[34] M. Vaidyanathan,et al. Extrapolated f/sub max/ of heterojunction bipolar transistors , 1999 .
[35] A. Chatterjee. Analog integration in a 0.35μm Cu metal pitch, 0.1μm gate length, low-power digital CMOS technology , 2001 .
[36] Didier Belot,et al. A Bluetooth radio in 0.18 μm CMOS , 2002 .
[37] H. Shichijo,et al. Analog integration in a 0.35 /spl mu/m Cu metal pitch, 0.1 /spl mu/m gate length, low-power digital CMOS technology , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
[38] Keng Leong Fong. High-frequency analysis of linearity improvement technique of common-emitter transconductance stage using a low-frequency-trap network , 2000, IEEE Journal of Solid-State Circuits.
[39] Timo Rahkonen,et al. The effects of source impedance on the linearity of BTJ common-emitter amplifiers , 2000, 2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353).
[40] H. Samavati,et al. Fractal capacitors , 1998, 1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition (Cat. No.98CH36156).
[41] S. Jansen,et al. Silicon bipolar VCO family for 1.1 to 2.2 GHz with fully-integrated tank and tuning circuits , 1997, 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers.
[42] V. Aparin,et al. Effect of out-of-band terminations on intermodulation distortion in common-emitter circuits , 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).
[43] K. Jenkins,et al. Integrated RF components in a SiGe bipolar technology , 1997 .
[44] A. Hajimiri,et al. Capacity limits and matching properties of lateral flux integrated capacitors , 2001, Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169).
[45] Joachim N. Burghartz. Spiral inductors on silicon—status and trends (invited article) , 1998 .
[46] J. Raskin,et al. Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling , 1998 .
[47] Lawrence E. Larson,et al. Bipolar transistor epilayer design using the MAIDS mixed-level simulator , 1999 .
[48] Tom K. Johansen,et al. Optimization of SiGe VCOs for Wireless Applications , .
[49] M. Soyuer,et al. A fully-monolithic SiGe differential voltage-controlled oscillator for 5 GHz wireless applications , 2000, 2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096).
[50] Ralph S. Carson. Radio Communications Concepts: Analog , 1990 .
[51] Gabor C. Temes,et al. Introduction to Circuit Synthesis and Design , 1977 .
[52] David L. Pulfrey,et al. Extrapolated of Heterojunction Bipolar Transistors , 1999 .
[53] R.H. Rasshofer,et al. Long-term stability of passive millimeterwave circuits on high-resistivity silicon substrates , 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).
[54] Thomas H. Lee,et al. The Design of CMOS Radio-Frequency Integrated Circuits: RF CIRCUITS THROUGH THE AGES , 2003 .
[55] S. P. Voinigescu,et al. An assessment of the state-of-the-art 0.5 /spl mu/m bulk CMOS technology for RF applications , 1995, Proceedings of International Electron Devices Meeting.
[56] M. W. Oliphant,et al. An introduction to GSM , 1995 .
[57] D. Leeson. A simple model of feedback oscillator noise spectrum , 1966 .
[58] Didier Belot,et al. Substrate parasitic extraction for RF integrated circuits , 2002, Proceedings 2002 Design, Automation and Test in Europe Conference and Exhibition.
[59] A. Abidi,et al. Large suspended inductors on silicon and their use in a 2- mu m CMOS RF amplifier , 1993, IEEE Electron Device Letters.
[60] John D. Cressler,et al. RF linearity characteristics of SiGe HBTs , 2001 .
[61] J. Cressler. SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications , 1998 .
[62] Lawrence E. Larson. Integrated circuit technology options for RFICs-present status and future directions , 1998 .
[63] G. Knoblinger,et al. Modeling the gate-related high-frequency and noise characteristics of deep-submicron MOSFETs , 2002, Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285).
[64] Lawrence E. Larson,et al. Integrated circuit technology options for RFIC's-present status and future directions , 1997, Proceedings of CICC 97 - Custom Integrated Circuits Conference.
[65] Joachim N. Burghartz. Status and Trends in Silicon RF Technology , 1999, 29th European Solid-State Device Research Conference.
[66] R. Jos. Future developments and technology options in cellular phone power amplifiers: from power amplifier to integrated RF front-end module , 2000, Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124).
[67] K.T. Ng,et al. IC-Compatible Two-level Bulk Micromachining for RF Silicon Technology , 2000, 30th European Solid-State Device Research Conference.
[68] Y. Tsividis. Operation and modeling of the MOS transistor , 1987 .
[69] Jianping Pan,et al. Design of a low-cost integrated 0.25 /spl mu/m CMOS Bluetooth SOC in 16.5 mm/sup 2/ silicon area , 2002, 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315).
[70] Giuseppe La Rosa,et al. A review of hot-carrier degradation mechanisms in MOSFETs , 1996 .
[71] HongMo Wang. A 9.8 GHz back-gate tuned VCO in 0.35 /spl mu/m CMOS , 1999 .
[72] Lawrence E. Larson,et al. Microwave transformers, inductors and transmission lines implemented in an Si/SiGe HBT process , 2001 .
[73] J. J. Lee,et al. SOI CMOS with high-performance passive components for analog, RF, and mixed signal design , 1998, 1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199).
[74] Donald Y. C. Lie,et al. Phase noise analysis of fully-integrated digitally-tuned wideband Si/SiGe BiCMOS VCOs , 2002, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.
[75] J. Cressler,et al. Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits , 1995 .
[76] Paul Cooper Davis. Merits and requirements of a few RF architectures , 1999, Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024).
[77] Mark J. W. Rodwell,et al. Submicron scaling of HBTs , 2001 .
[78] Hei Wong. Drain breakdown in submicron MOSFETs: a review , 2000 .
[79] Lawrence E. Larson,et al. Noise power optimization of monolithic CMOS VCOs , 1999, 1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001).
[80] A. Ziel. Noise in solid state devices and circuits , 1986 .
[81] L.E. Larson,et al. A deep-submicrometer microwave/digital CMOS/SOS technology , 1991, IEEE Electron Device Letters.
[82] Herbert Kroemer,et al. Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region , 1985 .
[83] A.L. Lacaita,et al. A fully-integrated low-power low-noise 2.6-GHz bipolar VCO for wireless applications , 2001, IEEE Microwave and Wireless Components Letters.
[84] John D. Cressler,et al. A unified approach to RF and microwave noise parameter modeling in bipolar transistors , 2001 .
[85] J. Scholvin,et al. A Faraday cage isolation structure for substrate crosstalk suppression , 2001, IEEE Microwave and Wireless Components Letters.
[86] M. J. Deen,et al. MOSFET modeling for low noise, RF circuit design , 2002, Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285).
[87] A. Wagemans,et al. A 3.5 mW 2.5 GHz diversity receiver and a 1.2 mW 3.6 GHz VCO in silicon-on-anything , 1998, 1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition (Cat. No.98CH36156).
[88] A. Hajimiri,et al. Design issues in CMOS differential LC oscillators , 1999, IEEE J. Solid State Circuits.
[89] Lee-Sup Kim,et al. Modeling of the distributed gate RC effect in MOSFET's , 1989, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..