Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric

We have developed a silicon oxynitride (SiON) deposition process using a plasma-enhanced chemical vapor deposition system for the gate dielectric of GaN-on-Si metal–insulator–semiconductor field-effect transistors (MISFETs). The optimized SiON film had a relative dielectric constant of 5.3 and a breakdown field of 12MV/cm. A normally-off GaN-on-Si MISFET fabricated with a 33-nm SiON gate dielectric exhibited a threshold voltage of ~2 V, an ON-resistance of <inline-formula> <tex-math notation="LaTeX">$7.85~\mathsf {m}\Omega \cdot \mathsf {cm}^{{\mathsf {2}}}$ </tex-math></inline-formula>, and a breakdown voltage of ~640 V at the OFF-state current density of <inline-formula> <tex-math notation="LaTeX">$1~\mu \text{A}$ </tex-math></inline-formula>/mm. The extracted interface trap density was <inline-formula> <tex-math notation="LaTeX">$\mathsf {1} \times \mathsf {10}^{{\mathsf {12}}}$ </tex-math></inline-formula> cm<inline-formula> <tex-math notation="LaTeX">$^{{\mathsf {-2}}}\cdot \mathsf {eV}^{\mathsf {-1}}$ </tex-math></inline-formula> at <inline-formula> <tex-math notation="LaTeX">${E}_{c}- {E}_{t}= \mathsf {0.442}$ </tex-math></inline-formula> eV, which resulted in negligible hysteresis and excellent dynamic characteristics.

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