论文信息 - Self-heating in FinFET and GAA-NW using Si, Ge and III/V channels

Self-heating in FinFET and GAA-NW using Si, Ge and III/V channels

The self-heating (SH) effect is studied experimentally and through simulations on an extensive set of industry-relevant solutions for FF and GAA-NW Si and high-mobility devices, with multiple processing options. Considerations for managing SH in future technologies are provided.

[1] Z. Akšamija,et al. Thermal conductivity of Si 1-x Ge x /Si 1-y Ge y superlattices: Competition between interfacial and internal scattering , 2013 .