A 5.8 GHz 1 V Linear Power Amplifier Using a Novel On-Chip Transformer Power Combiner in Standard 90 nm CMOS

A fully integrated 5.8 GHz Class AB linear power amplifier (PA) in a standard 90 nm CMOS process using thin oxide transistors utilizes a novel on-chip transformer power combining network. The transformer combines the power of four push-pull stages with low insertion loss over the bandwidth of interest and is compatible with standard CMOS process without any additional analog or RF enhancements. With a 1 V power supply, the PA achieves 24.3 dBm maximum output power at a peak drain efficiency of 27% and 20.5 dBm output power at the 1 dB compression point.

[1]  Ali Hajimiri,et al.  Distributed active transformer-a new power-combining and impedance-transformation technique , 2002 .

[2]  Bumman Kim,et al.  A single-chip linear CMOS power amplifier for 2.4 GHz WLAN , 2006, 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers.

[3]  T.S.D. Cheung,et al.  A 21-26-GHz SiGe bipolar power amplifier MMIC , 2005, IEEE Journal of Solid-State Circuits.

[4]  Gang Liu,et al.  A 5.8 GHz Linear Power Amplifier in a Standard 90nm CMOS Process using a 1V Power Supply , 2007, 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium.

[5]  S.R. Sanders,et al.  Power supply rejection for common-source linear RF amplifiers: theory and measurements , 2006, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006.

[6]  Ali M. Niknejad,et al.  A 1.2V, 2.4GHz Fully Integrated Linear CMOS Power Amplifier with Efficiency Enhancement , 2006, IEEE Custom Integrated Circuits Conference 2006.

[7]  Gang Liu,et al.  CMOS compatible transformer power combiner , 2006 .

[8]  Ali Hajimiri,et al.  A fully-integrated 1.8-V, 2.8-W, 1.9-GHz, CMOS power amplifier , 2003, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003.