G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems

G4-FET has attracted attention as an emerging device for the future generations of semiconductor industry. This paper is intended to propose a model representing the characteristics of G4FET device in order to perform circuit simulations. The modeling approach is established upon the neuro-fuzzy technique whose main strength is that they are universal approximators with the ability to solicit interpretable IF-THEN rules. The accuracy of the proposed model is verified by HSPICE circuit simulations.

[1]  K. Akarvardar,et al.  Analytical modeling of the two-dimensional potential distribution and threshold voltage of the SOI four-gate transistor , 2006, IEEE Transactions on Electron Devices.

[2]  Chuen-Tsai Sun,et al.  Neuro-fuzzy modeling and control , 1995, Proc. IEEE.

[3]  M. Mojarradi,et al.  The Four-Gate Transistor , 2002, 32nd European Solid-State Device Research Conference.

[4]  peixiong zhao,et al.  Depletion-All-Around Operation of the SOI Four-Gate Transistor , 2007, IEEE Transactions on Electron Devices.

[5]  T. Chiang.  A new two-dimensional analytical model for the fully-depleted SOI four-gate transistor , 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

[6]  Sheng Li,et al.  Design of a mask-programmable memory/multiplier array using G4-FET technology , 2008, 2008 45th ACM/IEEE Design Automation Conference.

[7]  K. Akarvardar,et al.  The G/sup 4/-FET: low voltage to high voltage operation and performance , 2003, 2003 IEEE International Conference on SOI.

[8]  S. Cristoloveanu,et al.  A review of the SOI four-gate transistor , 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

[9]  Sorin Cristoloveanu,et al.  The G4-FET: a universal and programmable logic gate , 2005, GLSVLSI '05.

[10]  Mohsen Hayati,et al.  Double Gate MOSFET Modeling Based on Adaptive Neuro‐Fuzzy Inference System for Nanoscale Circuit Simulation , 2010 .