High power LDMOS for cellular base station applications

A 2.2-GHz Si Power LDMOS (Laterally Diffused MOS) with an output power of 150 W and a drain efficiency of 47%, both higher than that of conventional devices, was developed for cellular base station applications. Also higher reliability is ensured by preventing the hot electron degradation. The LDMOS has a double-doped offset structure and an SG (Second Gate) structure.

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