A nitrogen-treated memristive device for tunable electronic synapses

We propose a redox-based tunable memristive device for neuromorphic applications. First, we report the implementation of a 150 nm Pt/TiNx/Pr0.7Ca0.3MnO3(PCMO)/Pt memristive device with multi-level storage capability for use as an electronic synapse. In addition, we investigate the tunable memristive characteristics on Schottky barrier modulation. The Schottky barrier was formed by the interface between a TiNx electrode and a p-type PCMO. By changing the nitrogen gas flow during the reactive sputter deposition of the TiNx electrode, we have successfully engineered the Schottky barrier height, resulting in the modulation of the current and demonstrating the feasibility of tunable electronic synapses.

[1]  T. Fauster,et al.  Image-potential states and work function of graphene , 2014, Journal of physics. Condensed matter : an Institute of Physics journal.

[2]  Weisheng Zhao,et al.  Neuromorphic function learning with carbon nanotube based synapses , 2013, Nanotechnology.

[3]  Jörgen Olsson,et al.  Variable work function in MOS capacitors utilizing nitrogen-controlled TiNx gate electrodes , 2004 .

[4]  H. Michaelson.  The work function of the elements and its periodicity , 1977 .

[5]  Q. X. Jia,et al.  Work function of the mixed-valent manganese perovskites , 2004 .

[6]  B. DeSalvo,et al.  CBRAM devices as binary synapses for low-power stochastic neuromorphic systems: Auditory (Cochlea) and visual (Retina) cognitive processing applications , 2012, 2012 International Electron Devices Meeting.

[7]  Shimeng Yu,et al.  Synaptic electronics: materials, devices and applications , 2013, Nanotechnology.

[8]  Byoung Hun Lee,et al.  Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device , 2013, Nanotechnology.

[9]  Yong Liu,et al.  Specifications of Nanoscale Devices and Circuits for Neuromorphic Computational Systems , 2013, IEEE Transactions on Electron Devices.

[10]  Matteo Rini,et al.  Control of the electronic phase of a manganite by mode-selective vibrational excitation , 2007, Nature.

[11]  Daniel P. F. Sturdy,et al.  The connectivity of the brain: multi-level quantitative analysis , 1995, Biological Cybernetics.

[12]  Hyunsang Hwang,et al.  Cover Picture: Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen‐deficient layer (Phys. Status Solidi RRL 10–11/2011) , 2011 .

[13]  Shimeng Yu,et al.  A Low Energy Oxide‐Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation , 2013, Advanced materials.

[14]  M. Pickett,et al.  Phase transitions enable computational universality in neuristor-based cellular automata. , 2013, Nanotechnology.

[15]  Olivier Bichler,et al.  Phase change memory as synapse for ultra-dense neuromorphic systems: Application to complex visual pattern extraction , 2011, 2011 International Electron Devices Meeting.

[16]  H. Hwang,et al.  Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device , 2011, Nanotechnology.

[17]  E. Suzuki,et al.  Investigation of the TiN Gate Electrode With Tunable Work Function and Its Application for FinFET Fabrication , 2006, IEEE Transactions on Nanotechnology.

[18]  H. Hwang,et al.  Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen‐deficient layer , 2011 .

[19]  K. Tachibana,et al.  Thin film deposition of metal oxides in resistance switching devices: electrode material dependence of resistance switching in manganite films , 2013, Nanoscale Research Letters.

[20]  Byoung Hun Lee,et al.  Self‐formed Schottky barrier induced selector‐less RRAM for cross‐point memory applications , 2012 .

[21]  H. Kim,et al.  RRAM-based synapse for neuromorphic system with pattern recognition function , 2012, 2012 International Electron Devices Meeting.

[22]  Hyunsang Hwang,et al.  Novel cross-point resistive switching memory with self-formed schottky barrier , 2010, 2010 Symposium on VLSI Technology.