Room temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition

Room‐temperature cw operation for InGaP/InGaAlP double heterostructure (DH) laser diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by low‐pressure metalorganic chemical vapor deposition using methyl metalorganics. A lasing wavelength of 679 nm and a threshold current of 109 mA at 24 °C were obtained for an inner stripe structure laser diode with a 250‐μm‐long and 7‐μm stripe geometry. The laser operated at up to 51 °C. The characteristic temperature T0 was 87 K at around room temperature. The lowest threshold current density, 5.0 kA/cm2, was obtained with a 20‐μm stripe width laser diode under room‐temperature pulsed operation.