Transit Time Oscillations as a Source of EMC Problems in Bipolar Power Devices
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[1] STEVE ZUPONCIC,et al. Data sheets , 1973 .
[2] T. V. D. Roer. D.C. and small-signal A.C. properties of silicon Baritt diodes , 1977 .
[3] S. M. Sze. Physics of semiconductor devices /2nd edition/ , 1981 .
[4] J. Lutz,et al. IMPATT oscillations in fast recovery diodes due to temporarily charged radiation-induced deep levels , 1998 .
[5] P. Mourick,et al. Ultra high frequency oscillations in the reverse recovery current of fast diodes , 2002, Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.
[6] D. Silber,et al. Plasma extraction transit time oscillations in bipolar power devices , 2002 .
[7] R. Herzer,et al. Analysis of dynamic impatt oscillations caused by radiation induced deep centers , 2003, ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..
[8] Josef Lutz,et al. Possibilities and limits of axial lifetime control by radiation induced centers in fast recovery diodes , 2004, Microelectron. J..