Disorder-induced Raman scattering in NiSi2.

Disorder-induced Raman scattering (DIRS) has been observed in epitaxial films of ${\mathrm{NiSi}}_{2}$ on (111) Si. The DIRS, which is found to have primarily A-like symmetry, is attributed to Si-site disorder. A comparison with lower-resolution inelastic-neutron-scattering measurements on polycrystalline films suggests that the Raman spectra represent a coupling-parameter-weighted density of states.