论文信息 - Structural and electrophysical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well - 字舞流文

Structural and electrophysical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well

R. M. Imamov | E. Klimov | I. Vasil'evskii | A. Vasiliev | P. Maltsev | I. Trunkin | G. Galiev | S. Pushkarev | A. Klochkov | D. V. Lavruhin