A 600 volt MOSFET with near ideal on resistance

Two experimental 600 Volt power MOSFETs with a vertical source-drain geometry have been fabricated for megahertz power control applications. These devices are similar in design, differing chiefly in current capability. Both devices feature a unique use of ion implant for near ideal breakdown voltage and an intentionally large gate-drain overlap region to reduce device on-resistance at the expense of a lower frequency response.