论文信息 - Metallization of GaN thin films prepared by ion beam assisted molecular beam epitaxy - 字舞流文

Metallization of GaN thin films prepared by ion beam assisted molecular beam epitaxy

Nathan Newman | Nathan W. Cheung | Paul K. Chu | N. Newman | N. Cheung | P. Chu | M. Rubin | Xiaoze Liu | T. Fu | J. S. Chan | T. C. Fu | Xin Liu | J. T. Ross | Michael Rubin | J. Chan | J. Ross

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[3] N. Newman,et al. p‐type gallium nitride by reactive ion‐beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg , 1994 .