Class E and class D -1 GaN HEMT switched-mode power amplifiers

This paper deals with the design of transmission line class E and class D-1 GaN HEMT power amplifiers (PAs) to be used in polar transmitters. The Vdd-to-AM and Vdd-to-PM characteristics have been measured, being the observed nonlinearities related to device parameters. Measured results under a two-tone excitation support the need for predistorting functions.

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