论文信息 - On the impact of Carbon-doping and channel thickness on the dynamic Ron of 650V GaN power devices - 字舞流文

On the impact of Carbon-doping and channel thickness on the dynamic Ron of 650V GaN power devices

Gaudenzio Meneghesso | Enrico Zanoni | Peter Moens | M. Tack | Matteo Meneghini | Martin Kuball | Ali Salih | Michael J. Uren | P. Vanmeerbeek | Markus Caesar | A. Banerjee | M. Uren | M. Meneghini | G. Meneghesso | E. Zanoni | M. Tack | Jia Guo | Martin Kuball | P. Moens | A. Banerjee | P. Vanmeerbeek | M. Caesar | A. Salih | Charlie Liu | Jia Guo | Charlie Liu