论文信息 - Understanding and mitigating High-k induced device width and length dependencies for FinFET replacement metal gate technology - 字舞流文

Understanding and mitigating High-k induced device width and length dependencies for FinFET replacement metal gate technology

V. Narayanan | T. Ando | A. Madan | R. Pandey | H. Bu | P. Dehaven | I. Ok | S. Fan | T. Yamashita | A. Dasgupta | R. Sathiyanarayanan | M. Chace | Q. Yuan | S. Khan