Room-Temperature Terahertz Oscillation of Electron Devices

Compact and coherent light sources are key components for development of terahertz frequency range in which various applications are expected. Recent progress in room-temperature terahertz oscillators using resonant tunneling diodes are shown here. Fundamental oscillation up to 1.04 THz has been achieved with a structure having short transit time of electrons. This is the first oscillation above 1 THz in room-temperature electronic single oscillators. Structures for high output power, frequency change with bias voltage, and spectral linewidth are also described.

[1]  K. Hirakawa,et al.  Dispersive terahertz gain of non-classical oscillator: Bloch oscillation in semiconductor superlattices , 2005, 2005 IEEE LEOS Annual Meeting Conference Proceedings.

[2]  W. Hafez,et al.  Pseudomorphic InP/InGaAs Heterojunction Bipolar Transistors (PHBTs) Experimentally Demonstrating fT = 765 GHz at 25°C Increasing to fT = 845 GHz at -55°C , 2006, 2006 International Electron Devices Meeting.

[3]  R.M. Weikle,et al.  Opening the terahertz window with integrated diode circuits , 2005, IEEE Journal of Solid-State Circuits.

[4]  T. Furuta,et al.  Photonic generation of continuous THz wave using uni-traveling-carrier photodiode , 2005, Journal of Lightwave Technology.

[5]  M. Asada,et al.  Fundamental Oscillation of up to 831 GHz in GaInAs/AlAs Resonant Tunneling Diode , 2009, 2009 IEEE International Conference on Indium Phosphide & Related Materials.

[6]  E. Linfield,et al.  Terahertz semiconductor-heterostructure laser , 2002, Nature.

[7]  Safumi Suzuki,et al.  Resonant Tunneling Diodes for Sub-Terahertz and Terahertz Oscillators , 2008 .

[8]  S. Suzuki,et al.  Coherent Power Combination in Highly Integrated Resonant Tunneling Diode Oscillators with Slot Antennas , 2007, 2007 Joint 32nd International Conference on Infrared and Millimeter Waves and the 15th International Conference on Terahertz Electronics.

[9]  Safumi Suzuki,et al.  Voltage-controlled sub-terahertz oscillation of resonant tunnelling diode integrated with slot antenna , 2005 .

[10]  Safumi Suzuki,et al.  Increase of fundamental oscillation frequency in resonant tunneling diode with thin barrier and graded emitter structures , 2010, 35th International Conference on Infrared, Millimeter, and Terahertz Waves.

[11]  S. Suzuki,et al.  Fundamental oscillations at ~900 GHz with low bias voltages in RTDs with spike-doped structures , 2010 .

[12]  H. Eisele,et al.  Submillimeter-wave InP Gunn devices , 2004, IEEE Transactions on Microwave Theory and Techniques.

[13]  E. Linfield,et al.  Superlattice electronic devices as high-performance oscillators between 60–220 GHz , 2010 .

[14]  Eiichi Sano,et al.  Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems , 2006 .

[15]  S. Suzuki,et al.  Mutual Injection Locking between Sub-THz Oscillating Resonant Tunneling Diodes , 2005, 2005 Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics.

[16]  Safumi Suzuki,et al.  Measurement of Oscillation Frequency and Spectral Linewidth of Sub-Terahertz InP-Based Resonant Tunneling Diode Oscillators Using Ni–InP Schottky Barrier Diode , 2010 .

[17]  T. C. McGill,et al.  Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes , 1991 .

[18]  Safumi Suzuki,et al.  One THz harmonic oscillation of resonant tunneling diodes , 2005 .

[19]  V Radisic,et al.  Demonstration of a 0.48 THz Amplifier Module Using InP HEMT Transistors , 2010, IEEE Microwave and Wireless Components Letters.

[20]  Z. Griffith,et al.  Sub-300 nm InGaAs/InP Type-I DHBTs with a 150 nm collector, 30 nm base demonstrating 755 GHz fmax and 416 GHz fT , 2007, 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials.

[21]  M. Reddy,et al.  Monolithic Schottky-collector resonant tunnel diode oscillator arrays to 650 GHz , 1997, IEEE Electron Device Letters.

[22]  Behzad Razavi.  A 300-GHz fundamental oscillator in 65-nm CMOS technology , 2010, VLSIC 2010.