Time Dependent Dielectric Breakdown of Cobalt and Ruthenium Interconnects at 36nm Pitch

Time dependent dielectric breakdown (TDDB) properties of cobalt and ruthenium interconnects were investigated in 36 nm pitch dual damascene test vehicles. We demonstrate that cobalt and ruthenium interconnects with significantly scaled barrier/adhesion layers can achieve comparable TDDB reliability to the Cu standard. This study suggests the properties of low-k dielectrics will gate the maximum supported electric field Emax for these material systems.

[1]  Raghuveer Patlolla,et al.  Future on-chip interconnect metallization and electromigration , 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

[2]  D. Edelstein,et al.  Experimental study of nanoscale Co damascene BEOL interconnect structures , 2016, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).

[3]  K. Sankaran,et al.  Thickness dependence of the resistivity of platinum-group metal thin films , 2017, 1701.04124.

[4]  Wei Wang,et al.  Ruthenium interconnect resistivity and reliability at 48 nm pitch , 2016, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).

[5]  Z. Tokei,et al.  Water and Copper Contamination in SiOC:H Damascene: Novel Characterization Methodology based on Triangular Voltage Sweep Measurements , 2006, 2006 International Interconnect Technology Conference.

[6]  Christopher J. Wilson,et al.  Ruthenium metallization for advanced interconnects , 2016, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).

[7]  K. Croes,et al.  Interconnect metals beyond copper: reliability challenges and opportunities , 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

[8]  D. Gall.  Electron mean free path in elemental metals , 2016 .

[9]  F. Mont,et al.  Electromigration and resistivity in on-chip Cu, Co and Ru damascene nanowires , 2017, 2017 IEEE International Interconnect Technology Conference (IITC).

[10]  Yunlong Li,et al.  Insights into metal drift induced failure in MOL and BEOL , 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

[11]  P. Roper,et al.  Full copper wiring in a sub-0.25 /spl mu/m CMOS ULSI technology , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[12]  M. Shinosky,et al.  Invasion percolation model for abnormal TDDB characteristic of ULK dielectrics with Cu interconnect at advanced technology nodes , 2011, 2011 International Reliability Physics Symposium.

[13]  M. H. van der Veen,et al.  Reliability study on cobalt and ruthenium as alternative metals for advanced interconnects , 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

[14]  Christoph Adelmann,et al.  Alternative metals for advanced interconnects , 2014, IEEE International Interconnect Technology Conference.