High-Performance HfO2 Gate Dielectrics Fluorinated by Postdeposition CF4 Plasma Treatment

Downlo High-Performance HfO2 Gate Dielectrics Fluorinated by Postdeposition CF4 Plasma Treatment Woei Cherng Wu, Chao Sung Lai, Jer Chyi Wang, Jian Hao Chen, Ming Wen Ma, and Tien Sheng Chao Department of Electrophysics and Department of Electronic Engineering, National Chiao Tung University, Hsinchu, Taiwan Department of Electronic Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan, Taiwan Nanya Technology Corporation, Kueishan, Taoyuan, Taiwan

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