An accurate HEMT large signal model usable in SPICE simulators

A large-signal HEMT (high-electron-mobility-transistor) model has been developed and implemented within a parameter extractor program and SPICE. The model predicts HEMT behavior significantly better than previous MESFET models, but it also exhibits some deficiencies at high bias levels. The parameter extraction results indicate that the addition of a V/sub ds/ dependent critical voltage for the onset of transconductance degradation may improve the model. The validity of the model has been examined by comparing harmonic content predicted by SPICE to measured results.<<ETX>>