Comparison of liquid- and vapor-phase silylation processes for 193-nm positive-tone lithography

Liquid- and vapor-phase silylation processes are compared for a 193 nm positive-tone lithographic process using polyvinylphenol as a resist. The liquid-phase process, using a mixture of xylene, hexamethylcyclotrisilazane, and propylene glycol methyl ether acetate, was found to have higher silylation contrast, better sensitivity, and a smaller proximity effect (a decrease in silylation depth for smaller feature sizes). These factors result in a larger exposure latitude, particularly at feature sizes below 0.5 micrometers . These advantages are greatly offset, however, by the increased chemical costs, which are estimated to be more than 100 times greater than for the vapor-phase process.

[1]  D. Shaver,et al.  Silylation processes based on ultraviolet laser‐induced crosslinking , 1990 .

[2]  Mark A. Hartney Modeling of positive‐tone silylation processes for 193‐nm lithography , 1993 .

[3]  Cesar M. Garza,et al.  Silicon diffusion characteristics of different surface-imaging resists , 1990, Advanced Lithography.

[4]  Robert-Jan Visser,et al.  Single Level Dry Developable Resist Systems, Based On Gas Phase Silylation , 1989, Advanced Lithography.

[5]  A. Pomerene,et al.  Positive mode silylation process characterization , 1992 .

[6]  Noreen L. Thomas,et al.  A theory of case II diffusion , 1982 .

[7]  Kurt G. Ronse,et al.  Liquid phase silylation for the DESIRE process , 1992, Advanced Lithography.

[8]  Evangelos Gogolides,et al.  Wet silylation and dry development with the AZ 5214TM photoresist , 1992 .

[9]  Stephen M. Bobbio,et al.  Techniques for characterization of silicon penetration during DUV surface imaging , 1991, Other Conferences.

[10]  Cesar M. Garza,et al.  Manufacturability Issues Of The DESIRE Process , 1989, Advanced Lithography.

[11]  D. C. Shaver,et al.  Silylation processes for 193-nm excimer laser lithography , 1990, Advanced Lithography.

[12]  Ki-Ho Baik,et al.  Comparative study between gas‐ and liquid‐phase silylation for the diffusion‐enhanced silylated resist process , 1991 .

[13]  D. C. Shaver,et al.  Small-field stepper for 193-nm lithography process development , 1992, Advanced Lithography.

[14]  Fedor Coopmans,et al.  Desire : A Novel Dry Developed Resist System , 1986, Advanced Lithography.

[15]  Maureen A. Hanratty,et al.  Deep-UV lithography for prototype 64-megabit DRAM fabrication , 1992, Advanced Lithography.

[16]  Mark A. Hartney,et al.  Experiment and simulation of sub-0.25-μm resist processes for 193-nm lithography , 1993, Advanced Lithography.