论文信息 - Determination of High Energy Neutron Voltage Stress Margins for High Voltage IGBT and Diode Pairs from Two Manufacturers using Energetic Particle Induced Charge Spectroscopy, EPICS

Determination of High Energy Neutron Voltage Stress Margins for High Voltage IGBT and Diode Pairs from Two Manufacturers using Energetic Particle Induced Charge Spectroscopy, EPICS

The use of high voltage [above 200V] electronic IGBT drives is increasing. To avoid destructive SEB of high voltage devices in the atmospheric neutron radiation environment, derating is recommended. The EPICS method is used to investigate actual IGBT and diode voltage stress margins for 2 manufacturers, both below and at SEB

R. Edwards | J. Woodhouse

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