论文信息 - InP-InGaAs uni-travelling-carrier photodiode for monolithic integration with heterojunction bipolar transistors

InP-InGaAs uni-travelling-carrier photodiode for monolithic integration with heterojunction bipolar transistors

A common epitaxial layer structure is proposed for a uni-travelling-carrier photodiode and a heterojunction bipolar transistor (HBT) for which zinc indiffusion is used on the HBT base-collector junctions to complete the photodiode structure. Fabricated photodiodes show 3 dB bandwidths of between 60 and 80 GHz for output voltages between 1 and 2 V.

T. Ishibashi | T. Furuta | K. Kurishima | U. Eriksson | S. Yamahata

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