Surface modification on InAs wetting layer by in-situ pulsed laser and the effets on quantum dot growth
暂无分享,去创建一个
[1] F. Patella,et al. Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth , 2003 .
[2] L. Seravalli,et al. Quantum dot nanostructures and molecular beam epitaxy , 2003 .
[3] Xu,et al. Selective laser removal of the dimer layer from Si(100) surfaces revealed by scanning tunneling microscopy. , 1996, Physical review. B, Condensed matter.
[4] Max G. Lagally,et al. In situ scanning tunneling microscopy observation of surface morphology of GaAs(001) grown by molecular beam epitaxy , 1992 .
[5] Koji S. Nakayama,et al. Electron- and photon-stimulated modification of GaAs(110), Si(100), and Si(111) , 1999 .
[6] Takafumi Yao,et al. Indium Reevaporation during Molecular Beam Epitaxial Growth of InGaAs Layers on GaAs Substrates. , 2000 .
[7] B. A. Joyce,et al. Surface alloying at InAsGaAs interfaces grown on (001) surfaces by molecular beam epitaxy , 1997 .
[8] J. Kanasaki,et al. Excitation-induced structural instability of semiconductor surfaces , 2006 .
[9] Yucheng Ding,et al. Ordering, positioning and uniformity of quantum dot arrays , 2012 .
[10] David A. Ritchie,et al. Formation and ordering of epitaxial quantum dots , 2008 .
[11] K. Zhang,et al. Formation and dissolution of InAs quantum dots on GaAs , 2000 .
[12] A. M. Stoneham,et al. TOPICAL REVIEW: Treatment of semiconductor surfaces by laser-induced electronic excitation , 2001 .