论文信息 - Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer - 字舞流文

Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer

Yasuo Ohno | Jin-Ping Ao | Cheng-Yu Hu | Hiroji Kawai | Katsutoshi Nakatani

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