WBG-Based PEBB Module for High Reliability Power Converters
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[1] Eldad Bahat Treidel,et al. Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress , 2016, IEEE Electron Device Letters.
[2] J. Lutz,et al. Semiconductor Power Devices: Physics, Characteristics, Reliability , 2011 .
[3] P. Elzer,et al. project overview , 2002 .
[4] Meng Zhang,et al. Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature , 2020, IEEE Access.
[6] Huai Wang,et al. Mission Profile Based Power Converter Reliability Analysis in a DC Power Electronic Based Power System , 2018, 2018 IEEE Energy Conversion Congress and Exposition (ECCE).
[7] Yifei Luo,et al. Failure Mechanism of Die-Attach Solder Joints in IGBT Modules Under Pulse High-Current Power Cycling , 2019, IEEE Journal of Emerging and Selected Topics in Power Electronics.
[8] Jianhua Wang,et al. Gate Failure Physics of SiC MOSFETs Under Short-Circuit Stress , 2020, IEEE Electron Device Letters.
[9] Huai Wang,et al. Design for reliability and robustness tool platform for power electronic systems — Study case on motor drive applications , 2018, 2018 IEEE Applied Power Electronics Conference and Exposition (APEC).
[10] Fang Zheng Peng,et al. Effect of Gate-Oxide Degradation on Electrical Parameters of Power MOSFETs , 2018, IEEE Transactions on Power Electronics.
[11] Wenjin Zhang,et al. A life evaluation method of film capacitor using accelerated life testing , 2016, 2016 11th International Conference on Reliability, Maintainability and Safety (ICRMS).
[12] Frede Blaabjerg,et al. Active Power Cycling Test Bench for SiC Power MOSFETs—Principles, Design, and Implementation , 2021, IEEE Transactions on Power Electronics.
[13] Garmanage,et al. Metallized Film Capacitor Lifetime Evaluation and Failure Mode Analysis , 2015 .
[14] Marian P. Kazmierkowski,et al. High Performance Power Supplies for Plasma Materials Processing , 2021, IEEE Access.
[15] Kong Boon Yeap,et al. Advanced Concepts for TDDB Reliability in Conjunction with 3D Stress , 2014 .
[16] Frede Blaabjerg,et al. Separation of Wear-Out Failure Modes of IGBT Modules in Grid-Connected Inverter Systems , 2018, IEEE Transactions on Power Electronics.
[17] Josef Lutz,et al. Model for Power Cycling lifetime of IGBT Modules - various factors influencing lifetime , 2008 .
[18] X. Jordà,et al. Short-circuit capability in p-GaNHEMTs and GaNMISHEMTs , 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
[20] Christian Navarre,et al. PROJECT MANAGEMENT IN THE AUTOMOTIVE INDUSTRY , 2004 .
[21] Weifeng Sun,et al. Reliability Concern of 650-V Normally-OFF GaN Devices Under Reverse Freewheeling Stress , 2020, IEEE Transactions on Electron Devices.
[22] Ali M. Bazzi,et al. Solar photovoltaic power electronic systems: Design for reliability approach , 2015, 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe).
[23] Ulrike Grossner,et al. Power Cycling of Commercial SiC MOSFETs , 2018, 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
[24] Huai Wang,et al. Wear-Out Failure Analysis of an Impedance-Source PV Microinverter Based on System-Level Electrothermal Modeling , 2019, IEEE Transactions on Industrial Electronics.
[25] Marco Liserre,et al. Improving Onboard Converter Reliability for More Electric Aircraft With Lifetime-Based Control , 2019, IEEE Transactions on Industrial Electronics.
[26] Dushan Boroyevich,et al. Modularized design consideration of a general-purpose, high-speed phase-leg PEBB based on SiC MOSFETs , 2011, Proceedings of the 2011 14th European Conference on Power Electronics and Applications.
[27] M. Meneghini,et al. Trapping phenomena and degradation mechanisms in GaN-based power HEMTs , 2017 .
[28] J. Lutz,et al. Power cycling reliability results of GaN HEMT devices , 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
[29] Nando Kaminski,et al. Acceleration of temperature humidity bias (THB) testing on IGBT modules by high bias levels , 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
[30] Xuhui Wen,et al. Reliability modeling and analysis of SiC MOSFET power modules , 2017, IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society.
[31] T. Wu,et al. MOSFET failure modes in the zero-voltage-switched full-bridge switching mode power supply applications , 2001, APEC 2001. Sixteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.01CH37181).
[32] Rik W. De Doncker,et al. Methodology for Active Thermal Cycle Reduction of Power Electronic Modules , 2019, IEEE Transactions on Power Electronics.
[33] Dehong Xu,et al. Survey on Fault-Tolerant Techniques for Power Electronic Converters , 2014, IEEE Transactions on Power Electronics.