70-90 GHz balanced resistive PHFET mixer MMIC

A balanced resistive GaAs high electron mobility transistor mixer monolithic microwave integrated circuit has been designed and fabricated in a production oriented technology. The design is based on a specialised large signal model for linear transistor operation. The conversion loss was 8-10 dB for 70-90 GHz and the noise figure at 100 kHz was 31 dB, which is 11 dB lower than that obtained with diode mixers.