Low Loss Voltage Equalization Scheme for Series-Connected BiMOSFETs for Pulsed Power Applications
暂无分享,去创建一个
[1] Vamshi Krishna M,et al. Current controlled active gate driver for 1200V SiC MOSFET , 2016, 2016 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES).
[2] Yang Wen,et al. An active gate driver for improving switching performance of SiC MOSFET , 2018, 2018 7th International Symposium on Next Generation Electronics (ISNE).
[3] Purushottam Shrivastava,et al. Research, design and development activities on high power pulsed RF/Microwave systems and test facilities for particle accelerators , 2011, 2011 IEEE International Vacuum Electronics Conference (IVEC).
[4] I. Baraia,et al. An Experimentally Verified Active Gate Control Method for the Series Connection of IGBT/Diodes , 2012, IEEE Transactions on Power Electronics.
[5] J. Saiz,et al. Optimisation and integration of an active clamping circuit for IGBT series association , 2001, Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248).
[6] V. Sala,et al. A new active gate driver for improving the switching performance of SiC MOSFET , 2017, 2017 IEEE Applied Power Electronics Conference and Exposition (APEC).
[7] Dushan Boroyevich,et al. Active Gate-Driver With dv/dt Controller for Dynamic Voltage Balancing in Series-Connected SiC MOSFETs , 2019, IEEE Transactions on Industrial Electronics.
[8] P. Shrivastava,et al. A 100 kV, 20 A, 1 ms long pulse solid-state Marx modulator for klystron , 2018, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
[9] D. Chamund,et al. Review of series and parallel connection of IGBTs , 2006 .
[10] M. Fasching,et al. Series connection of high voltage IGBT modules , 1998, Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242).