Single-electron AND/NAND logic circuits based on a self-organized dot network

We experimentally demonstrated single-electron operations of an AND/NAND logic circuit based on a self-organized GaAs quantum-dot (QD) network fabricated by applying a selective-area metalorganic vapor-phase epitaxy technique. Single-electron logic operations using four cooperating single-electron tunneling (SET) transistors has been tested. This logic circuit has an architecture based on a binary decision diagram (BDD) using a Coulomb blockade (CB) in GaAs QDs, which is a representation of digital logic functions using directed graphs. BDD node devices consisting of two SET transistors achieved a two-way path switching operation in single-electron mode due to the CB effects which appeared complementarily in the two SET transistors at 1.9 K. We also demonstrated an AND/NAND operation in a logic circuit by integrating two BDD nodes.

[1]  K. Kumakura,et al.  GaAs Single Electron Transistors Fabricated by Selective Area Metalorganic Vapor Phase Epitaxy and Their Application to Single Electron Logic Circuits , 1999 .

[2]  J. E. Mooij,et al.  Single-electron inverter , 2000, cond-mat/0011520.

[3]  M. Bohr.  Nanotechnology goals and challenges for electronic applications , 2002 .

[4]  Sheldon B. Akers,et al.  Binary Decision Diagrams , 1978, IEEE Transactions on Computers.

[5]  Yasuo Takahashi,et al.  Si complementary single-electron inverter with voltage gain , 2000 .

[6]  Michel Devoret,et al.  Single Charge Tunneling , 1992 .

[7]  N. Stone,et al.  Logic circuit elements using single-electron tunnelling transistors , 1999 .

[8]  Yoshihito Amemiya,et al.  Single-electron logic device based on the binary decision diagram , 1997 .

[9]  Yasuo Takahashi,et al.  Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation , 2000 .

[10]  Takashi Fukui,et al.  Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors , 2002 .

[11]  Konstantin K. Likharev,et al.  Single-electron devices and their applications , 1999, Proc. IEEE.

[12]  T. Fukui,et al.  GaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices , 2001 .

[13]  T. Fukui,et al.  Fabrication and transport characterization of GaAs quantum dots connected with quantum wires fabricated by selective area metalorganic vapor phase epitaxy , 1998 .

[14]  H. Hasegawa,et al.  A single electron binary-decision-diagram quantum logic circuit based on Schottky wrap gate control of a GaAs nanowire hexagon , 2002, IEEE Electron Device Letters.