Chemical mechanical planarization: slurry chemistry, materials, and mechanisms.

3. FEOL Applications: Device Level 180 3.1. Shallow Trench Isolation (STI) CMP 180 3.2. Replacement Metal Gate CMP 184 3.3. Poly-Si CMP for FinFET Devices 186 4. MOL Applications: Contact Level 187 4.1. Tungsten CMP 187 5. BEOL Applications: Multilevel Interconnects 188 5.1. Copper Interconnect Technology 188 5.2. CMP Challenges in Cu Interconnects 189 5.2.1. Low-k and Ultralow-k Material Challenges 189 5.2.2. Integration Challenges 190 5.2.3. CMP Process Challenges 191 5.3. Copper Planarizarion Process 191 5.4. Ta/TaN Liner CMP Process 193 6. CMP Process-Induced Defects 194 6.1. Defects in FEOL CMP 194 6.2. Defects in MOL Tungsten CMP 195 6.3. Defects in Cu BEOL CMP 195 6.3.1. Corrosion of Copper 196 6.3.2. Scratches 196 6.3.3. Dishing, Erosion, and Trenching 196 6.3.4. Mechanical Damage 197 6.3.5. Other Defects 197 7. Models of CMP Processes 198 7.1. Models Based on Contact Mechanics 198 7.2. CMP Process Models 199 8. Alternative CMP Processes 200 9. Concluding Remarks 201 10. Acknowledgments 201 11. References 201

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