论文信息 - Transient Photoconductive Gain in A-Si : H Devices and Its Applications in Radiation Detection

Transient Photoconductive Gain in A-Si : H Devices and Its Applications in Radiation Detection

Abstract Using the transient behavior of the photoconductive-gain mechanism, a signal gain in radiation detection with a-Si:H devices may be possible. The photoconductive gain mechanism in two types of hydrogenated amorphous silicon devices, p-i-n and n-i-n configurations, was investigated in connection with applications to radiation detection. Photoconductive gain was measured in two time scales: one for short pulses of visible light ( 2 . Various gain results are discussed in terms of the device structure, applied bias and dark-current density.

[1] Toshihisa Hamano,et al. An Amorphous Si High Speed Linear Image Sensor , 1981 .

[2] R. Tsu,et al. Equilibrium temperature and related defects in intrinsic glow discharge amorphous silicon , 1987 .

[3] McMahon,et al. Hole trapping, light soaking, and secondary photocurrent transients in amorphous silicon. , 1989, Physical Review B (Condensed Matter).

[4] Richard L. Weisfield,et al. Two-dimensional amorphous-silicon photoconductor array for optical imaging. , 1992, Applied optics.

[5] V. Perez-Mendez,et al. Detection of Charged Particles in Amorphous Silicon Layers , 1986, IEEE Transactions on Nuclear Science.

[6] M. Shur,et al. Amorphous silicon photoconductive diode , 1989 .

[7] Toshiaki Kagawa,et al. Amorphous Silicon Photoconductive Sensor , 1982 .

[8] N. Joshi. Analytical approach towards transient phenomena in photoconductors , 1983 .

[9] S. Fonash,et al. Bias‐voltage‐ and bias‐light‐dependent high photocurrent gains in amorphous silicon Schottky barriers , 1993 .

[10] Fred W. Schmidlin,et al. Theory of trap-controlled transient photoconduction , 1977 .

[11] Albert Rose,et al. Concepts in photoconductivity and allied problems , 1963 .

[12] H. Okamoto,et al. Amorphous-Silicon Photovoltaic X-Ray Sensor , 1985 .