论文信息 - 40 Gbit/s monolithic digital OEIC composed of unitravelling-carrier photodiode and InP HEMTs - 字舞流文

40 Gbit/s monolithic digital OEIC composed of unitravelling-carrier photodiode and InP HEMTs

An optoelectronic integrated circuit (OEIC) receiver with a measured sensitivity of -27.5 dBm for a 40 Gbit/s return-to-zero optical signal is described. The results indicate the potential of current in high-speed optical communication systems.

Yutaka Miyamoto | Akira Hirano | Yohtaro Umeda | K. Murata | N. Shimizu | T. Akeyoshi | H. Kitabayashi | T. Furuta | N. Watanabe

[1] Wolfgang Bronner,et al. 40 Gbit/s 1.55 [micro sign]m pin-HEMT photoreceiver monolithically integrated on 3 in GaAs substrate , 1998 .

[2] Taiichi Otsuji,et al. 45 Gbit/s decision IC module using InAlAs/InGaAs/InP HEMTs , 1999 .

[3] Ultrafast monolithic receiver OEIC module operating at over 40 Gbit/s , 1999 .

[4] Michael Schlechtweg,et al. Monolithic, high transimpedance gain (3.3 k[ohm sign]), 40 Gbit/s InP-HBT-photoreceiver with differential outputs , 1999 .

[5] Taiichi Otsuji,et al. 40-Gbit/s TDM transmission technologies based on ultra-high-speed ICs , 1999 .

[6] W. Schlaak,et al. 37 GHz bandwidth InP-based photoreceiver OEIC suitable for data rates up to 50 Gb/s , 1999, IEEE Photonics Technology Letters.

[7] Kazuo Hagimoto,et al. 40 Gbit/s high sensitivity optical receiver with uni-travelling-carrier photodiode acting as decision IC driver , 1998 .