论文信息 - Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature

Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature

Starting from 3C-SiC(111) layers grown by Vapour-Liquid-Solid mechanism, homoepitaxial growth by Chemical Vapour Deposition was carried out on top of these seeds. The effect of the growth temperature and of the C/Si ratio in the gas phase was investigated on the surface morphology, the roughness and the defect density. It was found that the initial highly step-bunched surface of the VLS seeds could be greatly smoothen using appropriate conditions. These conditions were also found to reduce significantly the defect size and/or density at the surface.

[1] G. Ferro,et al. Nucleation of 3C–SiC on 6H–SiC from a liquid phase , 2007 .

[2] K. Kojima,et al. Effect of growth condition on micropipe filling of 4H-SiC epitaxial layer , 2005 .

[3] G. Ferro,et al. Surface preparation of α-SiC for the epitaxial growth of 3C–SiC , 2005 .

[4] H. Tsuchida,et al. Influence of 4H–SiC Growth Conditions on Micropipe Dissociation , 2002 .

[5] H. Okumura,et al. 3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics , 2002 .