论文信息 - Lead–salt lasers

Lead–salt lasers

Lead–salt diode lasers have been commercially available for more than two decades and became essential for laser mid–infrared gas analysis with high sensitivity and selectivity. Their emission covers the wavelength range from below 3 μm to more than 20 μm. Continuous emission is observed to above 200 K, and pulsed emission to above 80°C. Their main advantage over other materials is a two orders of magnitude lower Auger recombination rate. Basic material properties, the present state–of–the–art lead–salt lasers and trends and possibilities are discussed.

Maurus Tacke

[1] M. McDonald,et al. Low threshold PbEuSeTe/PbTe separate confinement buried heterostructure diode lasers , 1996 .

[2] M. Helm. Long wavelength infrared emitters based on quantum wells and superlattices , 2000 .

[3] Thermal-mismatch strain relaxation mechanisms in heteroepitaxial lead chalcogenide layers on Si substrates , 1993 .

[4] M. Tacke,et al. Annealing of far infrared photoconductors with infrared diode lasers , 1991 .

[5] A. Katzir,et al. Pb/sub 1-x/Sn/sub x/Se/Pb/sub 1-x-y/Eu/sub y/Sn/sub x/Se corrugated diode lasers , 1989 .

[6] I. Vurgaftman,et al. IV–VI compound midinfrared high-reflectivity mirrors and vertical-cavity surface-emitting lasers grown by molecular-beam epitaxy , 2000 .

[7] M. Tacke,et al. IV–VI QUANTUM WELLS FOR INFRARED LASERS , 1995 .

[8] M. Tacke,et al. MBE of Pb1−xEuxSe for the use in IR devices , 1987 .

[9] M. Tacke,et al. Embossed monomode single heterostructure distributed feedback lead chalcogenide diode lasers , 1992 .

[10] M. Tacke,et al. Temperature dependence of R0A product for PbSe photodiodes fabricated by MBE and diffusion , 1992 .

[11] M. Tacke,et al. Heteroepitaxial Pb1−xSnxSe on Si infrared sensor array with 12 μm cutoff wavelength , 1989 .

[12] J. N. Walpole,et al. MBE techniques for IV–VI optoelectronic devices , 1981 .