The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process

The plasma enhanced atomic layer deposition process for the HfO2 thin film is modeled as simple reactions between Hf(OH)3NH2 and reactive oxygen species. The density functional theory calculation was performed for plausible reaction pathways to construct the reaction profile. While the triplet molecular oxygen is unlikely to form a reactive complex, the singlet molecular oxygen forms the stable adduct that goes through the transition state and completes the reaction pathway to the products. Either two singlet or two triplet oxygen atoms make the singlet adduct complex, which follows the same pathway to the product as the singlet molecular oxygen reacts.

[1]  H. Bernhard Schlegel,et al.  Reaction Path Following in Mass-Weighted Internal Coordinates , 1990 .

[2]  Youngdo Won,et al.  Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method , 2005 .

[3]  Parr,et al.  Development of the Colle-Salvetti correlation-energy formula into a functional of the electron density. , 1988, Physical review. B, Condensed matter.

[4]  Jane P. Chang,et al.  Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films , 2005 .

[5]  Ye Xu,et al.  Atomic layer deposition of high-κ dielectrics on nitrided silicon surfaces , 2005 .

[6]  Mikko Ritala,et al.  Chapter 2 – Atomic layer deposition , 2002 .

[7]  Seokhoon Kim,et al.  Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods , 2005 .

[8]  A. Becke Density-functional thermochemistry. III. The role of exact exchange , 1993 .

[9]  W. R. Wadt,et al.  Ab initio effective core potentials for molecular calculations. Potentials for K to Au including the outermost core orbitals , 1985 .

[10]  H. Schlegel,et al.  Combining Synchronous Transit and Quasi-Newton Methods to Find Transition States , 1993 .

[11]  David-Wei Zhang,et al.  Density functional study of initial HfCl4 adsorption and decomposition reactions on silicon surfaces with SiON interfacial layer , 2007 .

[12]  Seokhoon Kim,et al.  Characteristics of HfO2 thin films grown by plasma atomic layer deposition , 2005 .

[13]  H. Nalwa Handbook of thin film materials , 2002 .