200 mm Wafer level graphene transfer by wafer bonding technique

In this paper, wafer level transfer of graphene on to a dielectric substrate is demonstrated based on SiO2-SiO2 fusion bonding and de-bonding processes. The developed technique allows to transfer graphene on 200 mm wafer without any contamination; thus CMOS compatible. The experimental data verifies the successful transfer of the graphene on to another substrate with high quality and a yield value of 98% with average 3.5 kΩ/□ sheet resistance. To the best of authors knowledge, it is the first time demonstration of the graphene transfer based on SiO2-SiO2 fusion bonding and de-bonding process on 200 mm wafer level which would allow a complete integration of graphene material into a CMOS line and opens the way for new devices based on graphene material.