Heterogeneous Integration of GaInAsSb p-i-n Photodiodes on a Silicon-on-Insulator Waveguide Circuit

We report the integration of GalnAsSb p-i-n photo diodes on a silicon-on-insulator waveguide circuit. The device operates with low dark current (1.13 μA at -0.1 V) at room temperature. A high responsivity of 0.44 A/W is measured at 2.29 μm. This yields 1.63 × 10<sup>9</sup> cmHz<sup>1/2</sup>/W of Johnson-noise-limited-detectivity.

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