Analysis of non-punch through trench emitter insulated gate bipolar transistor (IGBT)

The modelling of steady-state characteristics in a trench emitter IGBT structure is presented. The semiconductor equations were solved in two dimensions with physical effects such as carrier-carrier scattering mobility, SRH and Auger recombination included. The I-V characteristics, internal characteristics forward voltage drop and latch-up characteristics have been investigated. Comparison between simulation and measurement have shown a good agreement.