Semiconductor optoelectronic devices based on interference-induced carrier modulation

Transport of carriers generated under the influence of optically induced spatial modulation is investigated theoretically and experimentally in semiconductors. The resulting transient photocurrent is studied under varied degrees of optical interference. It is shown that strong anisotropic properties describable by an interaction tensor are suitable for device applications. Device properties are characterized and are seen to be useful for the processing of optical signals with picosecond and femtosecond features. Accurate modeling demonstrates the formation of strong nodal fields whose effect is detrimental to the achievement of high current extinction. The manifestation of interference-induced carrier modulation is demonstrated with high-contrast recordings of autocorrelation of picosecond laser pulses in homogeneous materials. In other experiments, monitoring of laser coherence ranging from picoseconds to tens of femtoseconds is shown. >

[1]  H. Gerritsen,et al.  Ambipolar diffusion measurements in semiconductors using nonlinear transient gratings , 1978 .

[2]  B. Jensen.  Quantum theory of the complex dielectric constant of free carriers in polar semiconductors , 1982 .

[3]  G. Carter,et al.  Measurement of third order nonlinear susceptibilities by surface plasmons , 1982 .

[4]  René Lucas,et al.  Propriétés optiques des milieux solides et liquides soumis aux vibrations élastiques ultra sonores , 1932 .

[5]  W. Augustyniak,et al.  Picosecond photoconductivity in radiation‐damaged silicon‐on‐sapphire films , 1981 .

[6]  P. W. Smith,et al.  Applications of all-optical switching and logic , 1984, Philosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences.

[7]  D. Auston.  CHAPTER 4 – Picosecond Photoconductors: Physical Properties and Applications , 1984 .

[8]  J. R. Hill,et al.  Photoconductive response times of Si-on-sapphire damaged with Si28 ions , 1985 .

[9]  Eli Zeldov,et al.  Steady-state photocarrier grating technique for diffusion length measurement in photoconductive insulators , 1986 .

[10]  V. I. Little,et al.  Bragg reflection from a phase grating induced by nonlinear optical effects in liquids , 1970 .

[11]  E. M. Wright,et al.  Diffusion, diffraction and reflection in semiconductor o.b. devices , 1984, Philosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences.

[12]  D. Auston,et al.  Parametric Coupling in an Optically Excited Plasma in Ge , 1975 .

[13]  Robert Magnusson,et al.  Holographic grating formation in photorefractive crystals with arbitrary electron transport lengths , 1979 .

[14]  A. Smirl,et al.  Theory of degenerate four-wave mixing in picosecond excitation-probe experiments , 1983 .

[15]  D. Grischkowsky,et al.  Carrier Lifetime Dependence on Ion Implantation in Silicon , 1987 .

[16]  A. De Mari,et al.  An accurate numerical one-dimensional solution of the p-n junction under arbitrary transient conditions , 1967 .

[17]  Brian S. Wherrett,et al.  Picosecond transient orientational and concentration gratings in germanium , 1983 .

[18]  C. A. Hoffman,et al.  Measurement of surface recombination velocity in semiconductors by diffraction from picosecond transient free‐carrier gratings , 1978 .

[19]  K. Jarašiūnas,et al.  Investigation of non‐equilibrium processes in semiconductors by the method of transient holograms , 1977 .

[20]  R. Jain.  Degenerate Four-Wave Mixing In Semiconductors: Application To Phase Conjugation And To Picosecond-Resolved Studies Of Transient Carrier Dynamics , 1982 .

[21]  N. Bloembergen,et al.  Controlled stimulated Raman amplification and oscillation in hydrogen gas , 1967 .

[22]  D. Pohl,et al.  Stimulated thermal scattering of light , 1971 .

[23]  M. Soskin,et al.  Holographic storage in electrooptic crystals. i. steady state , 1978 .

[24]  R. Lum,et al.  Picosecond OMVPE GaAs/SiO 2 photoconductive devices and applications in materials characterization , 1987 .

[25]  H. Gerritsen,et al.  Study of surface recombination in GaAs and InP by picosecond optical techniques , 1980 .

[26]  P. Debye,et al.  On the Scattering of Light by Supersonic Waves. , 1932, Proceedings of the National Academy of Sciences of the United States of America.

[27]  A. Siegman.  Bragg diffraction of a Gaussian beam by a crossed-Gaussian volume grating* , 1977 .