Carrier transport in green AlInGaN based structures on c-plane substrates

In this paper, the carrier transport in (Al)InGaN based test structures with In-rich quantum wells on c-plane substrates is investigated under high current operation. To get access to the injection efficiency, the devices are processed as ridge waveguide lasers and examined above threshold. The slope efficiency reveals a slight decrease as a function of current even under pulsed operation that can be related to a reduction of the injection efficiency based on carrier leakage. As the test structure contains an InGaN detection layer on the n-side, it is possible to verify hole overflow across the active region. Moreover, by analysing the current dependence of the radiative recombination in the detection layer, the reduction of slope efficiency can be correlated to increasing hole leakage.

[1]  E. Fred Schubert,et al.  Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping , 2010 .

[2]  Mathew C. Schmidt,et al.  Gain comparison in polar and nonpolarsemipolar gallium-nitride-based laser diodes , 2012 .

[3]  Uwe Strauss,et al.  Progress of blue and green InGaN laser diodes , 2010, OPTO.

[4]  A. Lell,et al.  Development of AlInGaN based blue–violet lasers on GaN and SiC substrates , 2006 .

[5]  D. S. Sizov,et al.  Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes , 2011, IEEE Journal of Selected Topics in Quantum Electronics.

[6]  Hiroshi Nakajima,et al.  Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar {2021} GaN Substrates , 2012 .

[7]  W. Read,et al.  Statistics of the Recombinations of Holes and Electrons , 1952 .

[8]  C. Burrus,et al.  Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect , 1984 .

[9]  Takashi Miyoshi,et al.  InGaN‐based 518 and 488 nm laser diodes on c‐plane GaN substrate , 2010 .

[10]  Christoph Eichler,et al.  Beyond blue pico laser: development of high power blue and low power direct green , 2012, OPTO.

[11]  W. Scheibenzuber,et al.  Unequal Pumping of Quantum Wells in GaN-Based Laser Diodes , 2012 .

[12]  A. Avramescu,et al.  Current dependence of electro-optical parameters in green and blue (AlIn)GaN laser diodes , 2012 .

[13]  Hadis Morkoç,et al.  Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells , 2008 .

[14]  M. Kisin,et al.  Semi‐polar nitride surfaces and heterostructures , 2011 .

[15]  Adrian Avramescu,et al.  Investigation of long wavelength green InGaN lasers on c‐plane GaN up to 529 nm continuous wave operation , 2011 .

[16]  S. Lutgen,et al.  Waveguide design of green InGaN laser diodes , 2010 .

[17]  Rajaram Bhat,et al.  Impact of Carrier Transport on Aquamarine–Green Laser Performance , 2010 .

[18]  T. Wunderer,et al.  Three‐dimensional GaN for semipolar light emitters , 2011 .

[19]  M. Ikeda,et al.  High-Power (over 100 mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530 nm , 2012 .