Spectroscopic characterisation and chemical reactivity of silicon monoxide layers deposited on Cu(100)

[1]  F. Yubero,et al.  Anomalous behaviour in resonant Auger emission of SiOx thin films , 1999 .

[2]  A. Goldoni,et al.  Atomic origin of the Si core-level photoemission components in the C ( 2 × 2 ) Si-Cu(110) surface alloy , 1999 .

[3]  M. Suemitsu,et al.  Real-time measurements of Si 2 p core level during dry oxidation of Si(100) , 1998 .

[4]  Jingguang G. Chen.  NEXAFS investigations of transition metal oxides, nitrides, carbides, sulfides and other interstitial compounds , 1998 .

[5]  L. Schlapbach,et al.  Surface atomic structure of c(2×2)-Si on Cu(110) , 1997 .

[6]  D. P. Woodruff,et al.  Scanning tunnelling microscopy investigation of the oxygen-induced faceting and “nano-faceting” of a vicinal copper surface , 1997 .

[7]  J. Shallenberger.  Determination of chemistry and microstructure in SiOx (0.1 , 1996 .

[8]  J. T. Ranney,et al.  The Surface Science of Metal Oxides , 1995 .

[9]  F. Mcfeely,et al.  Core‐level photoemission and the structure of the Si/SiO2 interface: A reappraisal , 1994 .

[10]  P. Picozzi,et al.  SiOx surface stoichiometry by XPS: A comparison of various methods , 1994 .

[11]  Arun S. Mujumdar,et al.  Introduction to Surface Chemistry and Catalysis , 1994 .

[12]  Banaszak Holl MM,et al.  Si/SiO2 interface: New structures and well-defined model systems. , 1993, Physical review letters.

[13]  D. Goodman,et al.  The preparation and characterization of ultra-thin silicon dioxide films on a Mo(110) surface , 1993 .

[14]  D. W. Goodman,et al.  X-ray photoelectron spectroscopic characterization of ultra-thin silicon oxide films on a Mo(100) surface , 1992 .

[15]  Jackson,et al.  Atoms, molecules, solids, and surfaces: Applications of the generalized gradient approximation for exchange and correlation. , 1992, Physical review. B, Condensed matter.

[16]  P. Mutin,et al.  Sol-gel route to silicon suboxides. Preparation and characterization of silicon sesquioxide , 1991 .

[17]  F. J. Himpsel,et al.  Microscopic structure of the SiO 2 /Si interface , 1988 .

[18]  Bell,et al.  Photoemission study of SiOx (0 <= x <= 2) alloys. , 1988, Physical review. B, Condensed matter.

[19]  C. R. Helms,et al.  The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 , 1988 .

[20]  J. H. Thomas,et al.  Characterization of reactively evaporated SiOx thin films , 1987 .

[21]  I. Lindau,et al.  Atomic subshell photoionization cross sections and asymmetry parameters: 1 ⩽ Z ⩽ 103 , 1985 .

[22]  Franz J. Himpsel,et al.  Probing the transition layer at the SiO2‐Si interface using core level photoemission , 1984 .

[23]  Y. Jugnet,et al.  Effect of heat treatment on chemical and electronic structure of solid SiO : An electron spectroscopy study , 1977 .