Semiconductor Devices in Harsh Conditions

This chapter is dedicated to single-event effects on fullydepleted silicon-on-insulator (FDSOI) complementary metal oxide semiconductor (CMOS). Circuits using two technological nodes are simulated against heavy-ion impact effects: 32 nm bulk and 28 nm FDSOI. The simulations were done using technology computer-aided design (TCAD) tools. CONTENTS 3.

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