A Wide Dynamic Range CMOS Image Sensor with 200-1100 nm Spectral Sensitivity and High Robustness to Ultraviolet Light Exposure

A 5.6 m pixel pitch CMOS image sensor using following technologies was fabricated and evaluated. The pixels include the lateral overflow integration capacitor (LOFIC) for high sensitivity and high full well capacity (FWC) and buried channel source follower drivers for low noise. The photodiodes (PDs) are formed by a highly sensitive and highly robust to ultraviolet (UV) light technology.